Secondary electron images were captured using a Hitachi S-4300 scanning electron microscope (SEM). An accelerating voltage of 5 kV was used to collect the images.

A field-emission gun scanning electron microscopey (SEM) LEO1550 combined with a cathodoluminescence (CL) Gatan MonoCL4 detection system was employed. An electron acceleration voltage of 5 kV and a beam current below 1 nA were used to avoid the radiation damage and preserve the lateral resolution during the panchromatic SEM CL imaging. 

MOVPE growth were performed in a horizontal flow Aixtron 200/4HT RF-S reactor.

The templates were prepared using a nanoimprinting stamp, whic was replicate on the wafer using acrylate. Chlorine/Argon chemistry was used in order to etched GaN dashes to obtain the pendeo template. CHF3 chemistry was used in order to open GaN dashes windows and obtain the ELOG template.