Dataset for "Understanding the resolution limit of Displacement Talbot Lithography"

570 100 10044 4 29087 document 10044 Fig3_analysis_1um.xlsx application/vnd.openxmlformats-officedocument.spreadsheetml.sheet ab71eb7799a56ccd375b7d85081462b6 MD5 28438 2018-11-23 11:38:44 https://researchdata.bath.ac.uk/570/4/Fig3_analysis_1um.xlsx 570 4 4 application/vnd.openxmlformats-officedocument.spreadsheetml.sheet other Figure 3: Statistical analysis of the SEM pictures for the 1 µm pitch hexagonal mask. en public cc_by

Fig3_analysis_1um.xlsx

data 10045 4 29090 document 10045 Fig3_1um_mask_SEM_pictures.zip application/zip 3c8d10da083073336aa776d8a8312133 MD5 4052254 2018-11-23 11:39:29 https://researchdata.bath.ac.uk/570/5/Fig3_1um_mask_SEM_pictures.zip 570 5 5 application/zip other Figure 3: SEM pictures for the 1 µm pitch hexagonal mask. en public cc_by

Fig3_1um_mask_SEM_pictures.zip

data 10046 4 29093 document 10046 Fig3_analysis_1.5um.xlsx application/vnd.openxmlformats-officedocument.spreadsheetml.sheet 0768f8923528f5675b22cf2c42c02563 MD5 16542 2018-11-23 11:40:34 https://researchdata.bath.ac.uk/570/6/Fig3_analysis_1.5um.xlsx 570 6 6 application/vnd.openxmlformats-officedocument.spreadsheetml.sheet other Figure 3: Statistical analysis of the SEM pictures for the 1.5 µm pitch hexagonal mask. en public cc_by

Fig3_analysis_1.5um.xlsx

data 10047 5 29095 document 10047 Fig3_1.5um_mask.zip application/zip 47d033373370e2a93e5ff94304edb32b MD5 2455883 2018-11-23 11:40:37 https://researchdata.bath.ac.uk/570/7/Fig3_1.5um_mask.zip 570 7 7 application/zip other Figure 3: SEM pictures for the 1.5 µm pitch hexagonal mask. en public cc_by

Fig3_1.5um_mask.zip

data 10049 4 29100 document 10049 Fig4_data.zip application/zip 5edec809b7c420dfbc8b8d24fe01d0d6 MD5 131992 2018-11-23 11:43:05 https://researchdata.bath.ac.uk/570/9/Fig4_data.zip 570 9 9 application/zip other Data of Fig. 4: theoretical width, minimum background, and maximum secondary patterns correspond to width, Min, and Maxbackground respectively. X and Y are the axis index used. en public cc_by

Fig4_data.zip

data 10051 3 29104 document 10051 Fig5_data.zip application/zip 01ce9bcaf9302e7bf0012f6433b54ffd MD5 1546 2018-11-23 11:45:41 https://researchdata.bath.ac.uk/570/11/Fig5_data.zip 570 11 11 application/zip other Data of Fig. 5: theoretical width and maximum secondary patterns correspond to width and Maxbackground respectively. x the axis index used. en public cc_by

Fig5_data.zip

data 10053 4 29108 document 10053 Fig6_data.zip application/zip a7a9f99c14029e30f1fb4d5340f2b82d MD5 123721 2018-11-23 11:47:39 https://researchdata.bath.ac.uk/570/13/Fig6_data.zip 570 13 13 application/zip other Data of Fig. 6: theoretical width, minimum background, and maximum secondary patterns correspond to width, Min, and Maxbackground respectively. X and Y are the axis index used. en public cc_by

Fig6_data.zip

data 10056 5 29115 document 10056 Fig8_data.zip application/zip d4068e7cb655f2b98fb1ff6eb73b2975 MD5 179345 2018-11-23 11:50:02 https://researchdata.bath.ac.uk/570/16/Fig8_data.zip 570 16 16 application/zip other Data of Fig. 8: theoretical width, minimum background, ratio of maximum intensity between neighbouring features, and maximum secondary patterns correspond to width, Min, Diffprimsecond and Maxbackground respectively. X and Y are the axis index used. en public cc_by

Fig8_data.zip

data 10058 3 29120 document 10058 Fig9_data.zip application/zip 24d5c0d942a2a84e5918c89fc5c22966 MD5 171458 2018-11-23 11:51:10 https://researchdata.bath.ac.uk/570/18/Fig9_data.zip 570 18 18 application/zip other Data of Fig. 9: theoretical width, minimum background, ratio of maximum intensity between neighbouring features, and maximum secondary patterns correspond to width, Min, Diffprimsecond and Maxbackground respectively. X and Y are the axis index used. en public cc_by

Fig9_data.zip

data 10096 2 29196 document 10096 readme.docx application/vnd.openxmlformats-officedocument.wordprocessingml.document 5d45b237dc5dd7faf665b5423d181c17 MD5 12510 2018-11-27 11:49:37 https://researchdata.bath.ac.uk/570/19/readme.docx 570 19 19 application/vnd.openxmlformats-officedocument.wordprocessingml.document other Explanation of the figures data. en public cc_by

readme.docx

data 10097 1 29201 document 10097 indexcodes.txt text/plain d23cbdeae5ab6726131d8102a37c34b6 MD5 378 2018-11-27 11:59:44 https://researchdata.bath.ac.uk/570/20/indexcodes.txt 570 20 20 text/plain other Generate index codes conversion from other to indexcodes en public

indexcodes.txt

http://eprints.org/relation/isVersionOf https://researchdata.bath.ac.uk/id/document/10096 http://eprints.org/relation/isVolatileVersionOf https://researchdata.bath.ac.uk/id/document/10096 http://eprints.org/relation/isIndexCodesVersionOf https://researchdata.bath.ac.uk/id/document/10096 archive 7858 disk0/00/00/05/70 2019-12-19 13:49:05 2025-08-30 04:50:19 2019-12-19 13:49:05 data_collection show Chausse Pierre P.J.P.Chausse@bath.ac.uk University of Bath FALSE Le Boulbar Emmanuel elb43@bath.ac.uk 0000-0001-6364-3976 University of Bath FALSE Lis Szymon szymonlis@yahoo.com University of Bath FALSE Shields Philip P.Shields@bath.ac.uk 0000-0003-0517-132X University of Bath FALSE Dataset for "Understanding the resolution limit of Displacement Talbot Lithography" GB0020 HH0020 HH0040 dept_elec_eng nanostructures, DTL, Modelling, Resolution, Lithography Displacement Talbot lithography (DTL) is a new technique for patterning large areas with sub-micron periodic features with low cost. It has application in fields which cannot justify the cost of deep-UV photolithography such as plasmonics, photonic crystals, and metamaterials and competes with techniques such as nanoimprint and laser interference lithography. It is based on the interference of coherent light through a periodically patterned photomask. However, the factors affecting the resolution limit of the technique are unknown. Through computer simulations, we show the impact of the mask parameters on the size of the features that can be achieved and describe the separate figures of merit that should be optimised for successful patterning. Both amplitude and phase masks are considered for hexagonal and square arrays of openings on the mask. For large pitches, amplitude masks are shown to give the best resolution, whereas, for small pitches, phase masks are superior due to the shorter exposure time that is required. We also show how small changes in the mask pitch can dramatically affect the resolution achievable. As a result, this study provides important information for choosing new masks for DTL for targeted applications. This dataset is the result of a modelling but also experimental investigation of the DTL resolution for a specific resist and wavelength. The data was acquired using a Hitachi S-4300 scanning electron microscope (SEM), and a MATLAB code. 2019-02-20 University of Bath public RightsHolder University of Bath Engineering and Physical Sciences Research Council https://doi.org/10.13039/501100000266 EP/M022862/1 Manufacturing of Nano-Engineered III-N Semiconductors - Equipment Engineering and Physical Sciences Research Council https://doi.org/10.13039/501100000266 EP/M015181/1 Manufacturing of Nano-Engineered III-Nitride Semiconductors cent_nan cent_sus_tech cent_cmpcdt cent_adv_sensor_tech Full details may be found in the associated paper. Secondary electron images were captured using a Hitachi S-4300 scanning electron microscope (SEM). An accelerating voltage of 5 kV was used to collect the images. The statistical analysis was performed thanks to a image analysis software. The modelling has been performed thanks to a code in MATLAB. https://doi.org/10.1364/OE.27.005918 2016 2018 en 1 10.15125/BATH-00570 https://doi.org/10.1364/OE.27.005918 pub