% Ultra i 123 Resist linewidth obtained as a function of the energy exposure using Displacement Talbot lithography (DTL)
% Resist parameters: 800nm thick, baked at 90 degree Celsius for 90 seconds
% DTL Exposure parameters: DTL gap of 200 microns, DTL range of 6.4 microns
% Post exposure baked at 120 degree celsius for 90 seconds
% Developped in MF-CD-26 developper for 90 seconds et Room temperature




[exposure dose / (mJ.cm-2)]	[resist linewidth size / (nm)]
	50					240
	55					215
	60					190
	65					175
	70					150
	75					145
	80					125