% Diluted AZ 15 NXT: EC11 ratio 7:12 by weight resist Holes dimensions obtained as a function of the energy exposure using double exposure Displacement Talbot lithography (DTL)
% Resist parameters: 240nm thick, baked at 115 degree Celsius for 45 seconds
% DTL Exposure parameters for the first exposure with the 800nm period linear grating mask: DTL gap of 200 microns, DTL range of 6.4 microns / exposure dose fixed at 120 mJ.cm-2 
% DTL Exposure parameters for the second exposure with the 1.2 micron period linear grating mask: DTL gap of 200 microns, DTL range of 15 microns
% Post exposure baked at 120 degree celsius for 90 seconds
% Developped in AZ 726 developper for 30 seconds at Room temperature




[exposure dose 1.2micron linear grating mask/ (mJ.cm-2)]	[Holes width size / (nm)]	     [Holes length size / (nm)]
			35						160					415
			40						155					310
			45						150					280
			50						145					240