Dataset for Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods


Le Boulbar, E., Hosseini Vajargah, S., Edwards, P., Griffiths, I., Gîrgel, I., Coulon, P., Cherns, D., Martin, R., Humphreys, C., Bowen, C., Allsopp, D., Shields, P., 2016. Dataset for Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods. University of Bath. https://doi.org/10.15125/BATH-00150.


Controlling the long-range homogeneity of core-shell InGaN/GaN layers is essential for their use in light-emitting devices. Understanding the impact of the crystallographic arrangement and material composition on light emission at a nanometer scale is a key feature for the fabrication of efficient light emitting devices. We investigated the structural quality and composition of the material via Transmission Electron microscopy (TEM) and Energy Dispersive X-ray (EDX) spectroscopy. The light emission were qualitatively assessed via Hyperspectral Cathodolumiscence (CL) spectroscopy. We use these information to determine the impact of the composition inhomogeneities on light emission. We have found that a homegeneous long-range light emission can be achieved on InGaN/GaN core-shell structure despite the presence of nano-scale alloy compositional fluctuations.

Dataset abstract

This dataset contains the results of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Energy Dispersive X-ray (EDX) measurements carried out on InGaN/GaN core-shell nanostructures. The samples are highly regular arrays of GaN plasma etched cores onto which wide InGaN layer capped with a GaN layer were grown using different metal organic vapour phase epitaxy (MOVPE) growth parameters. Three different growth temperature were used to grow the InGaN layer: 750°C, 700°C and 650°C. SEM images were used to characterize the describe the fabrication, growth and assess nanorod morphologies. TEM were used to investigate the structural properties and assess the InGaN thickness along the entire length of the m-plane facets. EDX measurements were used to assess the homogeneity of the InGaN layer composition at different position along the m-plane facet and on the semi-polar facets.

Title: Dataset for Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods
Subjects: Electrical engineering > Optoelectronic Devices and Circuits
Materials sciences > Materials Characterisation
Materials sciences > Materials Synthesis and Growth
Optics, photonics and lasers > Optoelectronic Devices and Circuits
Superconductivity, magnetism and quantum fluids > Condensed Matter Physics
Departments: Faculty of Engineering & Design > Electronic & Electrical Engineering
DOI: https://doi.org/10.15125/BATH-00150
URI: https://researchdata.bath.ac.uk/id/eprint/150
Export:

Available Files

Data

Datasets in this collection

[[filtered.length]] datasets. Showing first 20