Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices


Le Boulbar, E., Lewins, C., Allsopp, D., Bowen, C., Shields, P., 2016. Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices. University of Bath. https://doi.org/10.15125/BATH-00154.


The ability to manipulate and guide light is crucial for the fabrication of photonic circuit. The behaviour of the light within a nanostructure is complex and manipulating light often require to accurately tune the dimension and the shape of the nanostructure. Semiconducting material such as Gallium Nitride (GaN) nanostructures could be used as building blocks to fabricate active and passive components for photonic circuit, such has core-shell light emitting diode and non-linear photonic-diode. Understanding the top-down fabrication process and controlling the profile of nanostructures is crucial to achieve and design appropriate devices characteristics. We investigated the impact of the temperature and the pressure on the profile of Inductively Coupled Plasma (ICP) etched Gallium Nitride nanorods and nanopores arrays. The nanostructure arrays were characterized via Secondary Electron Microscopy. We used the Secondary Electron images collected to extract the dimensions of the etched nanorods and nanopores. Our results show a threshold in the etch behaviour at a temperature of 125°C, which greatly enhanced the verticality of the GaN nanorods, whilst the modification of the pressure enables a fine tuning of the nanorod profile.

Dataset abstract

This dataset is the result of an investigation into the impact of the temperature and pressure on the fabrication of Gallium Nitride nanostructures. The dataset contains data acquired from etched nanorods and nanopores.The data was acquired using a Hitachi S-4300 scanning electron microscope (SEM). The secondary electron (SE) images were produced using the manufacturer-supplied software. Figure numbers in the data file descriptions refer to the Microelectronic Engineering article by Le Boulbar et al. (2016) referenced in the related publications section.

Title: Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices
Subjects: Electrical engineering > Optoelectronic Devices and Circuits
Optics, photonics and lasers > Optical Devices and Subsystems
Optics, photonics and lasers > Optoelectronic Devices and Circuits
Plasma physics > Plasmas - Technological
Departments: Faculty of Engineering & Design > Electronic & Electrical Engineering
Faculty of Engineering & Design > Mechanical Engineering
DOI: https://doi.org/10.15125/BATH-00154
URI: https://researchdata.bath.ac.uk/id/eprint/154
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