Dataset for 'Design and fabrication of enhanced lateral growth for dislocation reduction and strain management in GaN using nanodashes'


Shields, P., Le Boulbar, E., Priesol, J., Šatka, A., Allehiani, N., Naresh-Kumar, G., Fox, S., Trager-Cowan, C., 2017. Dataset for 'Design and fabrication of enhanced lateral growth for dislocation reduction and strain management in GaN using nanodashes'. University of Bath. https://doi.org/10.15125/BATH-00257.


Dataset abstract

This dataset contains the results of scanning electron microscopy (SEM) secondary electron (SE) images, panchromatic cathodoluminescence (CL) imaging and Electron Channelling Contrast Imaging (ECCI) and Raman spectroscopy on GaN epitaxial layers. These techniques were used to assess the morphology of the GaN crystal growth, and the dislocation density and strain in planar layers.

Title: Dataset for 'Design and fabrication of enhanced lateral growth for dislocation reduction and strain management in GaN using nanodashes'
Keywords: Optoelectronics, Materials, Gallium Nitride, Characterization, Cathodoluminescence, Dislocation, nanostructures
Subjects: Electrical engineering > Optoelectronic Devices and Circuits
Materials processing > Materials Processing
Materials sciences > Materials Characterisation
Materials sciences > Materials Synthesis and Growth
Departments: Faculty of Engineering & Design > Electronic & Electrical Engineering
DOI: https://doi.org/10.15125/BATH-00257
URI: https://researchdata.bath.ac.uk/id/eprint/257
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