# Dataset for Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (11-22) and Non-Polar (11-20) GaN Nanorods

The formation of gallium nitride (GaN) semi-polar and non-polar nanostructures is of importance for improving light extraction/absorption of optoelectronic devices, creating optical resonant cavities or reducing the defect density. However, very limited studies of nanotexturing via dry etching have been performed, in comparison to wet etching. In the paper associated with this dataset, we investigate the formation and morphology of semi-polar (11-22) and non-polar (11-20) GaN nanorods using inductively coupled plasma (ICP) etching. The impact of gas chemistry, pressure, temperature, radio-frequency (RF) and ICP power and time are explored. The scanning electron microscopy images contained in this dataset indicate that a chemical component of the etch process is found to have a significant impact on the morphology, being impacted by the polarity of the planes. In contrast, the images show that increasing the physical component enables the impact of crystal orientation to be minimized to achieve a circular nanorod profile with inclined sidewalls. These conditions were obtained for a small percentage of chlorine (Cl2) within the Cl2 + argon (Ar) plasma combined with a low pressure. Damage to the crystal was reduced by lowering the direct current (DC) bias through a reduction of the RF power and an increase of the ICP power.

Subjects:
Electrical engineering
Materials sciences

Cite this dataset as:
Coulon, P., 2020. Dataset for Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (11-22) and Non-Polar (11-20) GaN Nanorods. Bath: University of Bath Research Data Archive. Available from: https://doi.org/10.15125/BATH-00950.

## Data

Figure1.zip
application/zip (732kB)

Figure2.zip
application/zip (3MB)

Figure4.zip
application/zip (4MB)

Figure6.zip
application/zip (2MB)

Figure7.zip
application/zip (3MB)

Figure9.zip
application/zip (3MB)

Figure11.zip
application/zip (3MB)

Figure13.zip
application/zip (4MB)

## Creators

Pierre-Marie Coulon
University of Bath

## Contributors

University of Bath
Rights Holder

## Documentation

Data collection method:

Full details of the methodology may be found in the Materials and Methods section of the associated paper.

Technical details and requirements:

Secondary electron images were captured using a Hitachi S-4300 scanning electron microscope (SEM).

Coulon, P.-M., Feng, P., Wang, T., and Shields, P., 2020. Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar ($${11\overline{2}2}$$) and Non-Polar ($${11\overline{2}0}$$) GaN Nanorods. Nanomaterials, 10(12), 2562. Available from: https://doi.org/10.3390/nano10122562.

## Funders

Engineering and Physical Sciences Research Council (EPSRC)
https://doi.org/10.13039/501100000266

Manufacturing of Nano-Engineered III-N Semiconductors
EP/M015181/1

## Publication details

Publication date: 20 December 2020
by: University of Bath

Version: 1

URL for this record: https://researchdata.bath.ac.uk/id/eprint/950

## Related papers and books

Coulon, P.-M., Feng, P., Wang, T., and Shields, P., 2020. Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar ($${11\overline{2}2}$$) and Non-Polar ($${11\overline{2}0}$$) GaN Nanorods. Nanomaterials, 10(12), 2562. Available from: https://doi.org/10.3390/nano10122562.