Dataset for "‘Double’ Displacement Talbot Lithography: fast, wafer-scale, direct-writing of complex periodic nanopatterns"
This study developed a new low-cost nanolithographic tool for creating periodic arrays of complex, nano-motifs, across large areas within minutes. Displacement Talbot Lithography is combined with lateral nanopositioning to enable large-area patterning with the flexibility of a direct-write system. This enables the creation of different periodic patterns in short timescales using a single mask with no mask degradation. The dataset includes images of Matlab models (in .csv format) and SEM experimental pictures of the different experiments realised (discrete lateral illumination, continuous displacements during one illumination).
Cite this dataset as:
Chausse, P.,
Le Boulbar, E.,
Coulon, P.,
Shields, P.,
2019.
Dataset for "‘Double’ Displacement Talbot Lithography: fast, wafer-scale, direct-writing of complex periodic nanopatterns".
Bath: University of Bath Research Data Archive.
Available from: https://doi.org/10.15125/BATH-00709.
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Data
Figure 1.zip
application/zip (244MB)
Creative Commons: Attribution 4.0
Data of Fig. 1: Dual DTL exposures with single lateral displacement: - Matlab and csv files of the modelling data. - SEM pictures of the photoresist after Dual DTL exposure with a 1.5 µm hexagonal period amplitude mask. - SEM pictures after the e-beam deposition and lift-off process for a Dual DTL with a 1 µm hexagonal period amplitude mask.
Figure 2.zip
application/zip (589MB)
Creative Commons: Attribution 4.0
Data of Fig. 2: Reduction in pitch to below the incident exposure wavelength: - Matlab and csv files of the modelling data. - SEM pictures of the photoresist after a 3 points and 4 points reduction of pitch process.
Figure3.zip
application/zip (272MB)
Creative Commons: Attribution 4.0
Data of Fig. 3: Effect of continuous circular lateral displacements during DTL exposure: - Matlab and csv files of the modelling data. - SEM pictures of the photoresist for each radii.
Figure4.zip
application/zip (236MB)
Creative Commons: Attribution 4.0
Data of Fig. 4: Creation of various grating patterns from a single hexagonal mask: - Matlab and csv files of the modelling data. - SEM pictures of the photoresist for each displacement.
Figure5.zip
application/zip (169MB)
Creative Commons: Attribution 4.0
Data of Fig. 5: Demonstration of complex features: - Matlab and csv files of the modelling data. - SEM pictures of the photoresist for each displacement.
Creators
Pierre Chausse
University of Bath
Emmanuel Le Boulbar
University of Bath
Pierre-Marie Coulon
University of Bath
Philip Shields
University of Bath
Contributors
University of Bath
Rights Holder
Coverage
Temporal coverage:
From 2017 to 2019
Documentation
Technical details and requirements:
Secondary electron images were captured using a Hitachi S-4300 scanning electron microscope (SEM). An accelerating voltage of 5 kV was used to collect the images. The modelling has been performed by a code in MATLAB.
Documentation Files
readme.docx
application/vnd.openxmlformats-officedocument.wordprocessingml.document (13kB)
Creative Commons: Attribution 4.0
Description of the csv files (modelling data).
Funders
Engineering and Physical Sciences Research Council
https://doi.org/10.13039/501100000266
Manufacturing of Nano-Engineered III-N Semiconductors - Equipment
EP/M022862/1
Engineering and Physical Sciences Research Council
https://doi.org/10.13039/501100000266
Manufacturing of Nano-Engineered III-Nitride Semiconductors
EP/M015181/1
Publication details
Publication date: 18 October 2019
by: University of Bath
Version: 1
DOI: https://doi.org/10.15125/BATH-00709
URL for this record: https://researchdata.bath.ac.uk/id/eprint/709
Related papers and books
Chausse, P., Le Boulbar, E., Coulon, P.-M., and Shields, P. A., 2019. “Double” displacement Talbot lithography: fast, wafer-scale, direct-writing of complex periodic nanopatterns. Optics Express, 27(22), 32037. Available from: https://doi.org/10.1364/oe.27.032037.
Contact information
Please contact the Research Data Service in the first instance for all matters concerning this item.
Contact person: Pierre Chausse
Faculty of Engineering & Design
Electronic & Electrical Engineering
