Dataset for "‘Double’ Displacement Talbot Lithography: fast, wafer-scale, direct-writing of complex periodic nanopatterns"

Dataset for "‘Double’ Displacement Talbot Lithography: fast, wafer-scale, direct-writing of complex periodic nanopatterns"

This study developed a new low-cost nanolithographic tool for creating periodic arrays of complex, nano-motifs, across large areas within minutes. Displacement Talbot Lithography is combined with lateral nanopositioning to enable large-area patterning with the flexibility of a direct-write system. This enables the creation of different periodic patterns in short timescales using a single mask with no mask degradation. The dataset includes images of Matlab models (in .csv format) and SEM experimental pictures of the different experiments realised (discrete lateral illumination, continuous displacements during one illumination).

Subjects:
Materials processing
Optics, photonics and lasers

Cite this dataset as:
Chausse, P., Le Boulbar, E., Coulon, P., Shields, P., 2019. Dataset for "‘Double’ Displacement Talbot Lithography: fast, wafer-scale, direct-writing of complex periodic nanopatterns". Bath: University of Bath Research Data Archive. Available from: https://doi.org/10.15125/BATH-00709.

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Data

Figure%201.zip
application/zip (244MB)
Creative Commons: Attribution 4.0

Data of Fig. 1: Dual DTL exposures with single lateral displacement: - Matlab and csv files of the modelling data. - SEM pictures of the photoresist after Dual DTL exposure with a 1.5 µm hexagonal period amplitude mask. - SEM pictures after the e-beam deposition and lift-off process for a Dual DTL with a 1 µm hexagonal period amplitude mask.

Figure%202.zip
application/zip (589MB)
Creative Commons: Attribution 4.0

Data of Fig. 2: Reduction in pitch to below the incident exposure wavelength: - Matlab and csv files of the modelling data. - SEM pictures of the photoresist after a 3 points and 4 points reduction of pitch process.

Figure3.zip
application/zip (272MB)
Creative Commons: Attribution 4.0

Data of Fig. 3: Effect of continuous circular lateral displacements during DTL exposure: - Matlab and csv files of the modelling data. - SEM pictures of the photoresist for each radii.

Figure4.zip
application/zip (236MB)
Creative Commons: Attribution 4.0

Data of Fig. 4: Creation of various grating patterns from a single hexagonal mask: - Matlab and csv files of the modelling data. - SEM pictures of the photoresist for each displacement.

Figure5.zip
application/zip (169MB)
Creative Commons: Attribution 4.0

Data of Fig. 5: Demonstration of complex features: - Matlab and csv files of the modelling data. - SEM pictures of the photoresist for each displacement.

Creators

Pierre Chausse
University of Bath

Pierre-Marie Coulon
University of Bath

Philip Shields
University of Bath

Coverage

Temporal coverage:

From 2017 to 2019

Documentation

Technical details and requirements:

Secondary electron images were captured using a Hitachi S-4300 scanning electron microscope (SEM). An accelerating voltage of 5 kV was used to collect the images. The modelling has been performed by a code in MATLAB.

Documentation Files

readme.docx
application/vnd.openxmlformats-officedocument.wordprocessingml.document (13kB)
Creative Commons: Attribution 4.0

Description of the csv files (modelling data).

Funders

Engineering and Physical Sciences Research Council (EPSRC)
https://doi.org/10.13039/501100000266

Manufacturing of Nano-Engineered III-N Semiconductors - Equipment
EP/M022862/1

Engineering and Physical Sciences Research Council (EPSRC)
https://doi.org/10.13039/501100000266

Manufacturing of Nano-Engineered III-N Semiconductors
EP/M015181/1

Publication details

Publication date: 18 October 2019
by: University of Bath

Version: 1

DOI: https://doi.org/10.15125/BATH-00709

URL for this record: https://researchdata.bath.ac.uk/id/eprint/709

Related articles

Chausse, P., Le Boulbar, E., Coulon, P.-M. and Shields, P. A., 2019. “Double” displacement Talbot lithography: fast, wafer-scale, direct-writing of complex periodic nanopatterns. Optics Express, 27(22), p.32037. Available from: https://doi.org/10.1364/OE.27.032037.

Contact information

Please contact the Research Data Service in the first instance for all matters concerning this item.

Contact person: Pierre Chausse

Departments:

Faculty of Engineering & Design
Electronic & Electrical Engineering