Dataset for "Displacement Talbot Lithography: an alternative technique to fabricate nanostructured metamaterials"

Dataset for "Displacement Talbot Lithography: an alternative technique to fabricate nanostructured metamaterials"

This dataset contains scanning electron microscopy (SEM) secondary electron (SE) images of linear gratings resist, dashes and holes in resist that were obtained using Displacement Talbot lithography. These techniques were used to assess the dimensions of the resist features that were obtained with linear grating mask, using single or double exposure steps. SE images also shows the lift-off profile used in order to obtain metamaterial 'fishnet' like metallic structures. The dimensions of the measured linear gratings, dashes and holes are written in text files.

Subjects:
Manufacturing
Materials processing
Materials sciences
Optics, photonics and lasers

Cite this dataset as:
Le Boulbar, E., 2017. Dataset for "Displacement Talbot Lithography: an alternative technique to fabricate nanostructured metamaterials". University of Bath. https://doi.org/10.15125/BATH-00363.

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Data

Figure1a_30k_50mJ.bmp
image/x-ms-bmp (308kB)
Creative Commons: Attribution 4.0

Raw Secondary electron image of the 400 nm linear grating obtained for a 50mJ.cm-2 dose exposure used in Figure 1a

Figure1b_30k_60mJ.bmp
image/x-ms-bmp (308kB)
Creative Commons: Attribution 4.0

Raw Secondary electron image of the 400 nm linear grating obtained for a 60 mJ.cm-2 dose exposure used in Figure 1b

Figure1c_30k_70mJ.bmp
image/x-ms-bmp (308kB)
Creative Commons: Attribution 4.0

Raw Secondary electron image of the 400 nm linear grating obtained for a 70 mJ.cm-2 dose exposure used in Figure 1c

Figure1d_30k1_80mJ.bmp
image/x-ms-bmp (308kB)
Creative Commons: Attribution 4.0

Raw Secondary electron image of the 400 nm linear grating obtained for a 80 mJ.cm-2 dose exposure used in Figure 1d

Figure2_resist_ ... posure_data.txt
text/plain (565B)
Creative Commons: Attribution 4.0

Data of the resist linewidth size obtained as a function of the exposure dose extracted from secondary electron images

Figure3a_25k_50 ... m_20mJ600nm.bmp
image/x-ms-bmp (4MB)
Creative Commons: Attribution 4.0

Raw Secondary electron image of the dashes obtained after double exposure with a 800 nm period linear grating mask and a 1.2 micron period obtained used in Figure 3a

figure3b_25k_50 ... 2pt5mJ600nm.bmp
image/x-ms-bmp (4MB)
Creative Commons: Attribution 4.0

Raw Secondary electron image of the dashes obtained after double exposure with a 800 nm period linear grating mask and a 1.2 micron period obtained used in Figure 3b

Figure3c_25k_50 ... m_25mJ600nm.bmp
image/x-ms-bmp (4MB)
Creative Commons: Attribution 4.0

Raw Secondary electron image of the dashes obtained after double exposure with a 800 nm period linear grating mask and a 1.2 micron period obtained used in Figure 3c

Figure3d_25k_50 ... m_30mJ600nm.bmp
image/x-ms-bmp (4MB)
Creative Commons: Attribution 4.0

Raw Secondary electron image of the dashes obtained after double exposure with a 800 nm period linear grating mask and a 1.2 micron period obtained used in Figure 3d

Figure4_dashes_ ... ar_gratings.txt
text/plain (899B)
Creative Commons: Attribution 4.0

Data of the dashes dimensions (width and length) obtained as a function of the exposure dose extracted from secondary electron images showed in Figure 4

Fig5a_Normalize ... albotlength.txt
text/plain (68MB)
Creative Commons: Attribution 4.0

Modelling data of the normalized intensity of the aerial image integrated over one Talbot length obtained for a 800nm linear grating phase mask

Fig5b_Normalize ... albotlength.txt
text/plain (68MB)
Creative Commons: Attribution 4.0

Modelling data of the normalized intensity of the aerial image integrated over one Talbot length obtained for a 1200nm linear grating phase mask

Fig5c_Normalize ... ngphasemask.txt
text/plain (42kB)
Creative Commons: Attribution 4.0

Modelling data of the normalized intensity of the aerial image integrated over one Talbot length obtained for a 800nm linear grating phase mask along the x axis

Fig5d_Normalize ... ngphasemask.txt
text/plain (64kB)
Creative Commons: Attribution 4.0

Modelling data of the normalized intensity of the aerial image integrated over one Talbot length obtained for a 800nm linear grating phase mask along the y axis

Fig6a_Aerialdou ... g170mJ_30mJ.txt
text/plain (68MB)
Creative Commons: Attribution 4.0

Modelling data of the intensity of the aerial image integrated over one Talbot length obtained for a double exposure (Fig6a) Energy combination 170/30 mJ.cm-2

Fig6b_Aerialdou ... g170mJ_60mJ.txt
text/plain (68MB)
Creative Commons: Attribution 4.0

Modelling data of the intensity of the aerial image integrated over one Talbot length obtained for a double exposure (Fig6b) Energy combination 170/70 mJ.cm-2

Modelling data of the resist patterns expected after development for a double exposure for doses of 170mJ.c-2 and 30 mJ.cm-2 (Fig6c)

Fig6d_resistdev ... g170mJ_70mJ.txt
text/x-c (17MB)
Creative Commons: Attribution 4.0

Modelling data of the resist patterns expected after development for a double exposure for doses of 170mJ.c-2 and 70 mJ.cm-2 (Fig6c)

Fig7a_dashes_af ... HF3_etching.bmp
image/x-ms-bmp (4MB)
Creative Commons: Attribution 4.0

Raw Secondary electron image of the dashes obtained after CHF3 etching used in Figure 7a

Fig7b_150k_cros ... off_profile.bmp
image/x-ms-bmp (308kB)
Creative Commons: Attribution 4.0

Raw Secondary electron image of the lift-off profile obtained after CHF3 etching and BOE 100:1 steps used in Figure 7b

Fig8a_10k.tif
image/tiff (1MB)
Creative Commons: Attribution 4.0

Raw Secondary electron image of the metallic fishnet like structure obtained after metal deposition and lift-off process used in Fig 8a

Fig8b_10k.tif
image/tiff (1MB)
Creative Commons: Attribution 4.0

Raw Secondary electron image of the metallic fishnet like structure obtained after metal deposition and lift-off process used in Fig 8b

Fig9a_10kv_10k_ ... m_35mJ600nm.tif
image/tiff (1MB)
Creative Commons: Attribution 4.0

Raw Secondary electron image of holes in resist obtained after double exposure with a 800 nm period linear grating mask and a 1.2 micron period used in Figure 9a

fig9b_10k_120mJ ... m_40mJ600nm.tif
image/tiff (1MB)
Creative Commons: Attribution 4.0

Raw Secondary electron image of holes in resist obtained after double exposure with a 800 nm period linear grating mask and a 1.2 micron period used in Figure 9b

Fig9c_10k_120mJ ... m_45mJ600nm.tif
image/tiff (1MB)
Creative Commons: Attribution 4.0

Raw Secondary electron image of holes in resist obtained after double exposure with a 800 nm period linear grating mask and a 1.2 micron period used in Figure 9c

Fig9d_10k_120mJ ... m_50mJ600nm.tif
image/tiff (1MB)
Creative Commons: Attribution 4.0

Raw Secondary electron image of holes in resist obtained after double exposure with a 800 nm period linear grating mask and a 1.2 micron period used in Figure 9d

Figure10_holes_ ... ar_gratings.txt
text/plain (931B)
Creative Commons: Attribution 4.0

Data of holes in resist dimensions (width and length) obtained as a function of the exposure dose extracted from secondary electron images showed in Figure 10

Creators

Emmanuel Le Boulbar
University of Bath

Contributors

Philip Shields
Project Leader
University of Bath

University of Bath
Rights Holder

Coverage

Collection date(s):

1 September 2016

Documentation

Technical details and requirements:

Displacement Talbot Lithography (Phable), commercialized by Eulitha, was used to fabricate linear gratings, dashes and holes in resist. Phase mask of 800 nm period and 1.2 micron period, with a filling factor of 62%, were used for this study. Secondary electron images were captured using a Hitachi S-4300 scanning electron microscope (SEM). An accelerating voltage of 5 kV was used to collect the images. Edwards e-beam evaporator were used to deposit titanium and gold.

Funders

Engineering and Physical Sciences Research Council (EPSRC)
https://doi.org/10.13039/501100000266

Manufacturing of Nano-Engineered III-N Semiconductors
EP/M015181/1

Engineering and Physical Sciences Research Council (EPSRC)
https://doi.org/10.13039/501100000266

Manufacturing of Nano-Engineered III-N Semiconductors - Equipment
EP/M022862/1

Publication details

Publication date: 15 May 2017
by: University of Bath

Version: 1

DOI: https://doi.org/10.15125/BATH-00363

URL for this record: https://researchdata.bath.ac.uk/id/eprint/363

Related articles

Le Boulbar, E. D., Chausse, P. J. P., Lis, S. and Shields, P. A., 2017. Displacement Talbot lithography: an alternative technique to fabricate nanostructured metamaterials . In: Tiginyanu, I. M., ed, Nanotechnology VIIISPIE. Available from: https://doi.org/10.1117/12.2265774.

Contact information

Please contact the Research Data Service in the first instance for all matters concerning this item.

Contact person: Emmanuel Le Boulbar

Departments:

Faculty of Engineering & Design
Electronic & Electrical Engineering