Dataset for "The ABC model of recombination reinterpreted: impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes"

Dataset for "The ABC model of recombination reinterpreted: impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes"

The Excel files in this dataset contain the raw data (as measured) for the results/graphs presented in the manuscript "The ABC model of recombination reinterpreted: impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes". These measurements are of the optical power emitted from the light emitting diodes (LEDs) described in the manuscript for a range of applied forward bias currents at room temperature.

Subjects:
Electrical engineering
Optics, photonics and lasers

Cite this dataset as:
Allsopp, D., 2017. Dataset for "The ABC model of recombination reinterpreted: impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes". University of Bath. https://doi.org/10.15125/BATH-00377.

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Data

6.2%20C6010%20t ... rected6_v2.xlsx
application/vnd.openxmlformats-officedocument.spreadsheetml.sheet (2MB)
Creative Commons: Attribution 4.0

6.2 C6010 to 20 before Ni long matched to short pulse abc analysis data blue shift corrected 6, v2

Copy%20of%202%2 ... er%20Ni_v2.xlsx
application/vnd.openxmlformats-officedocument.spreadsheetml.sheet (614kB)
Creative Commons: Attribution 4.0

2 LIV 3 to 15 QWs before and after Ni, v2

Copy%20of%20LIV ... s%20Ni2_v2.xlsx
application/vnd.openxmlformats-officedocument.spreadsheetml.sheet (558kB)
Creative Commons: Attribution 4.0

LIV 3 to 15 QWs plus Ni2, v2

Creators

Duncan Allsopp
University of Bath

Contributors

Menno Kappers
Producer
University of Cambridge

University of Bath
Rights Holder

Coverage

Collection date(s):

From 4 January 2015 to 31 January 2016

Documentation

Data collection method:

As specifed under sub-heading "EXPERIMENTAL METHODS" of the associated paper. The data were obtained from measurements over a user-defined range of current of the light output power obtained using an integrating sphere (Newport) placed circa 5mm above to enable the LEDs (probed on-wafer) using low-profile probes to connect devices to a pulsed current source (Keithley 2600B). The measurement system was computer controlled via LabView. Full details of the InGaN/GaN sample structures, their growth by MOVPE and subsequent fabrication into working LEDs and the methods used in their characterisation are described on the second page of the article. Further information, if needed, can be obtained from the corresponding author. The data presented in figures 2, 3 and 4 of the paper are direct measurements of the light output power for different pulsed forward bias currents, these graphs being widely known as L-I curves, with the plotted data having been selected as "typical" from the 3 Excel files in this dataset. The data presented in figures 5(a), 5(b) and 5(c) was obtained via a standard, commercially available 3rd order curve fitting procedure from these typical L-I curves. Excel file "6.2 C6010 to 20 before Ni long matched to short pulse abc analysis data blue shift corrected6_v2.xlsx" contains a comprehensive archive of all results obtained by this curve fitting process for all the devices studied in carrying out this work.

Data processing and preparation activities:

As specifed under sub-headings "EXPERIMENTAL METHODS" and "REVISED ABC MODEL" of the associated paper.

Technical details and requirements:

The equipment used and the methods of its use is fully described under sub-heading "EXPERIMENTAL METHODS" of the associated paper.

Documentation Files

Introduction%20 ... s%20archive.txt
text/plain (2kB)
Creative Commons: Attribution 4.0

Introduction to the files in this dataset

Funders

Engineering and Physical Sciences Research Council (EPSRC)
https://doi.org/10.13039/501100000266

Lighting the Future
RG58696 and EP/I012591/1

Publication details

Publication date: 21 December 2017
by: University of Bath

Version: 1

DOI: https://doi.org/10.15125/BATH-00377

URL for this record: https://researchdata.bath.ac.uk/id/eprint/377

Related articles

Hopkins, M. A., Allsopp, D. W. E., Kappers, M. J., Oliver, R. A. and Humphreys, C. J., 2017. The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes. Journal of Applied Physics, 122(23), p.234505. Available from: https://doi.org/10.1063/1.4986434.

Contact information

Please contact the Research Data Service in the first instance for all matters concerning this item.

Contact person: Duncan Allsopp

Departments:

Faculty of Engineering & Design
Electronic & Electrical Engineering