Dataset for "The ABC model of recombination reinterpreted: impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes"

Data collection method:

As specifed under sub-heading "EXPERIMENTAL METHODS" of the associated paper. The data were obtained from measurements over a user-defined range of current of the light output power obtained using an integrating sphere (Newport) placed circa 5mm above to enable the LEDs (probed on-wafer) using low-profile probes to connect devices to a pulsed current source (Keithley 2600B). The measurement system was computer controlled via LabView. Full details of the InGaN/GaN sample structures, their growth by MOVPE and subsequent fabrication into working LEDs and the methods used in their characterisation are described on the second page of the article. Further information, if needed, can be obtained from the corresponding author. The data presented in figures 2, 3 and 4 of the paper are direct measurements of the light output power for different pulsed forward bias currents, these graphs being widely known as L-I curves, with the plotted data having been selected as "typical" from the 3 Excel files in this dataset. The data presented in figures 5(a), 5(b) and 5(c) was obtained via a standard, commercially available 3rd order curve fitting procedure from these typical L-I curves. Excel file "6.2 C6010 to 20 before Ni long matched to short pulse abc analysis data blue shift corrected6_v2.xlsx" contains a comprehensive archive of all results obtained by this curve fitting process for all the devices studied in carrying out this work.

Data processing and preparation activities:

As specifed under sub-headings "EXPERIMENTAL METHODS" and "REVISED ABC MODEL" of the associated paper.

Technical details and requirements:

The equipment used and the methods of its use is fully described under sub-heading "EXPERIMENTAL METHODS" of the associated paper.

Methodology link: