Dataset for "Displacement Talbot Lithography: an alternative technique to fabricate nanostructured metamaterials"
This dataset contains scanning electron microscopy (SEM) secondary electron (SE) images of linear gratings resist, dashes and holes in resist that were obtained using Displacement Talbot lithography. These techniques were used to assess the dimensions of the resist features that were obtained with linear grating mask, using single or double exposure steps. SE images also shows the lift-off profile used in order to obtain metamaterial 'fishnet' like metallic structures. The dimensions of the measured linear gratings, dashes and holes are written in text files.
Cite this dataset as:
Le Boulbar, E.,
2017.
Dataset for "Displacement Talbot Lithography: an alternative technique to fabricate nanostructured metamaterials".
Bath: University of Bath Research Data Archive.
Available from: https://doi.org/10.15125/BATH-00363.
Export
Data
Figure1a_30k_50mJ.bmp
image/x-ms-bmp (308kB)
Creative Commons: Attribution 4.0
Raw Secondary electron image of the 400 nm linear grating obtained for a 50mJ.cm-2 dose exposure used in Figure 1a
Figure1b_30k_60mJ.bmp
image/x-ms-bmp (308kB)
Creative Commons: Attribution 4.0
Raw Secondary electron image of the 400 nm linear grating obtained for a 60 mJ.cm-2 dose exposure used in Figure 1b
Figure1c_30k_70mJ.bmp
image/x-ms-bmp (308kB)
Creative Commons: Attribution 4.0
Raw Secondary electron image of the 400 nm linear grating obtained for a 70 mJ.cm-2 dose exposure used in Figure 1c
Figure1d_30k1_80mJ.bmp
image/x-ms-bmp (308kB)
Creative Commons: Attribution 4.0
Raw Secondary electron image of the 400 nm linear grating obtained for a 80 mJ.cm-2 dose exposure used in Figure 1d
Figure2_resist … exposure_data.txt
text/plain (565B)
Creative Commons: Attribution 4.0
Data of the resist linewidth size obtained as a function of the exposure dose extracted from secondary electron images
Figure3a_25k … 20mJ600nm.bmp
image/x-ms-bmp (4MB)
Creative Commons: Attribution 4.0
Raw Secondary electron image of the dashes obtained after double exposure with a 800 nm period linear grating mask and a 1.2 micron period obtained used in Figure 3a
figure3b_25k … 22pt5mJ600nm.bmp
image/x-ms-bmp (4MB)
Creative Commons: Attribution 4.0
Raw Secondary electron image of the dashes obtained after double exposure with a 800 nm period linear grating mask and a 1.2 micron period obtained used in Figure 3b
Figure3c_25k … 25mJ600nm.bmp
image/x-ms-bmp (4MB)
Creative Commons: Attribution 4.0
Raw Secondary electron image of the dashes obtained after double exposure with a 800 nm period linear grating mask and a 1.2 micron period obtained used in Figure 3c
Figure3d_25k … 30mJ600nm.bmp
image/x-ms-bmp (4MB)
Creative Commons: Attribution 4.0
Raw Secondary electron image of the dashes obtained after double exposure with a 800 nm period linear grating mask and a 1.2 micron period obtained used in Figure 3d
Figure4_dashes … gratings.txt
text/plain (899B)
Creative Commons: Attribution 4.0
Data of the dashes dimensions (width and length) obtained as a function of the exposure dose extracted from secondary electron images showed in Figure 4
Fig5a_Normalize … albotlength.txt
text/plain (68MB)
Creative Commons: Attribution 4.0
Modelling data of the normalized intensity of the aerial image integrated over one Talbot length obtained for a 800nm linear grating phase mask
Fig5b_Normalize … albotlength.txt
text/plain (68MB)
Creative Commons: Attribution 4.0
Modelling data of the normalized intensity of the aerial image integrated over one Talbot length obtained for a 1200nm linear grating phase mask
Fig5c_Normalize … ngphasemask.txt
text/plain (42kB)
Creative Commons: Attribution 4.0
Modelling data of the normalized intensity of the aerial image integrated over one Talbot length obtained for a 800nm linear grating phase mask along the x axis
Fig5d_Normalize … ngphasemask.txt
text/plain (64kB)
Creative Commons: Attribution 4.0
Modelling data of the normalized intensity of the aerial image integrated over one Talbot length obtained for a 800nm linear grating phase mask along the y axis
Fig6a_Aerialdou … g170mJ_30mJ.txt
text/plain (68MB)
Creative Commons: Attribution 4.0
Modelling data of the intensity of the aerial image integrated over one Talbot length obtained for a double exposure (Fig6a) Energy combination 170/30 mJ.cm-2
Fig6b_Aerialdou … g170mJ_60mJ.txt
text/plain (68MB)
Creative Commons: Attribution 4.0
Modelling data of the intensity of the aerial image integrated over one Talbot length obtained for a double exposure (Fig6b) Energy combination 170/70 mJ.cm-2
Fig6c_resistdev … g170mJ_30mJ.txt
text/x-c (25MB)
Modelling data of the resist patterns expected after development for a double exposure for doses of 170mJ.c-2 and 30 mJ.cm-2 (Fig6c)
Fig6d_resistdev … g170mJ_70mJ.txt
text/x-c (17MB)
Creative Commons: Attribution 4.0
Modelling data of the resist patterns expected after development for a double exposure for doses of 170mJ.c-2 and 70 mJ.cm-2 (Fig6c)
Fig7a_dashes … CHF3_etching.bmp
image/x-ms-bmp (4MB)
Creative Commons: Attribution 4.0
Raw Secondary electron image of the dashes obtained after CHF3 etching used in Figure 7a
Fig7b_150k … lift-off_profile.bmp
image/x-ms-bmp (308kB)
Creative Commons: Attribution 4.0
Raw Secondary electron image of the lift-off profile obtained after CHF3 etching and BOE 100:1 steps used in Figure 7b
Fig8a_10k.tif
image/tiff (1MB)
Creative Commons: Attribution 4.0
Raw Secondary electron image of the metallic fishnet like structure obtained after metal deposition and lift-off process used in Fig 8a
Fig8b_10k.tif
image/tiff (1MB)
Creative Commons: Attribution 4.0
Raw Secondary electron image of the metallic fishnet like structure obtained after metal deposition and lift-off process used in Fig 8b
Fig9a_10kv … 120mJ400nm_35mJ600nm.tif
image/tiff (1MB)
Creative Commons: Attribution 4.0
Raw Secondary electron image of holes in resist obtained after double exposure with a 800 nm period linear grating mask and a 1.2 micron period used in Figure 9a
fig9b_10k_120mJ400nm … J600nm.tif
image/tiff (1MB)
Creative Commons: Attribution 4.0
Raw Secondary electron image of holes in resist obtained after double exposure with a 800 nm period linear grating mask and a 1.2 micron period used in Figure 9b
Fig9c_10k_120mJ400nm … J600nm.tif
image/tiff (1MB)
Creative Commons: Attribution 4.0
Raw Secondary electron image of holes in resist obtained after double exposure with a 800 nm period linear grating mask and a 1.2 micron period used in Figure 9c
Fig9d_10k_120mJ400nm … J600nm.tif
image/tiff (1MB)
Creative Commons: Attribution 4.0
Raw Secondary electron image of holes in resist obtained after double exposure with a 800 nm period linear grating mask and a 1.2 micron period used in Figure 9d
Figure10_holes … gratings.txt
text/plain (931B)
Creative Commons: Attribution 4.0
Data of holes in resist dimensions (width and length) obtained as a function of the exposure dose extracted from secondary electron images showed in Figure 10
Creators
Emmanuel Le Boulbar
University of Bath
Coverage
Collection date(s):
1 September 2016
Documentation
Technical details and requirements:
Displacement Talbot Lithography (Phable), commercialized by Eulitha, was used to fabricate linear gratings, dashes and holes in resist. Phase mask of 800 nm period and 1.2 micron period, with a filling factor of 62%, were used for this study. Secondary electron images were captured using a Hitachi S-4300 scanning electron microscope (SEM). An accelerating voltage of 5 kV was used to collect the images. Edwards e-beam evaporator were used to deposit titanium and gold.
Funders
Engineering and Physical Sciences Research Council
https://doi.org/10.13039/501100000266
Manufacturing of Nano-Engineered III-Nitride Semiconductors
EP/M015181/1
Engineering and Physical Sciences Research Council
https://doi.org/10.13039/501100000266
Manufacturing of Nano-Engineered III-N Semiconductors - Equipment
EP/M022862/1
Publication details
Publication date: 15 May 2017
by: University of Bath
Version: 1
DOI: https://doi.org/10.15125/BATH-00363
URL for this record: https://researchdata.bath.ac.uk/id/eprint/363
Related papers and books
Le Boulbar, E. D., Chausse, P. J. P., Lis, S., and Shields, P. A., 2017. Displacement Talbot lithography: an alternative technique to fabricate nanostructured metamaterials. In: Tiginyanu, I. M. (ed.) SPIE Proceedings. SPIE. Available from: https://doi.org/10.1117/12.2265774.
Contact information
Please contact the Research Data Service in the first instance for all matters concerning this item.
Contact person: Emmanuel Le Boulbar
Faculty of Engineering & Design
Electronic & Electrical Engineering
